US 12,034,024 B2
Solid-state imaging device and electronic apparatus
Yoshiki Ebiko, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/265,264
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jul. 12, 2019, PCT No. PCT/JP2019/027627
§ 371(c)(1), (2) Date Feb. 2, 2021,
PCT Pub. No. WO2020/036025, PCT Pub. Date Feb. 20, 2020.
Claims priority of application No. 2018-152290 (JP), filed on Aug. 13, 2018.
Prior Publication US 2021/0313361 A1, Oct. 7, 2021
Int. Cl. H01L 27/146 (2006.01); G02B 5/20 (2006.01)
CPC H01L 27/1463 (2013.01) [G02B 5/201 (2013.01); G02B 5/208 (2013.01); H01L 27/14607 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14649 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A solid-state imaging device, comprising:
a substrate;
a first photoelectric conversion unit formed on the substrate;
a second photoelectric conversion unit that is formed on the substrate and adjacent to the first photoelectric conversion unit;
a third photoelectric conversion unit that is formed on the substrate and adjacent to the second photoelectric conversion unit;
infrared absorbing filters selectively disposed on a light incident surface side of the first photoelectric conversion unit and the second photoelectric conversion unit;
a first color filter disposed on the light incident surface side of the first photoelectric conversion unit;
a second color filter disposed on the light incident surface side of the second photoelectric conversion unit;
a third color filter disposed on the light incident surface side of the third photoelectric conversion unit;
a first element isolation unit disposed between the first photoelectric conversion unit and the second photoelectric conversion unit; and
a second element isolation unit disposed between the second photoelectric conversion unit and the third photoelectric conversion unit, wherein
a cross-sectional area of the first element isolation unit along a direction in which the first photoelectric conversion unit and the second photoelectric conversion unit are aligned is smaller than a cross-sectional area of the second element isolation unit along a direction in which the second photoelectric conversion unit and the third photoelectric conversion unit are aligned.