US 12,034,023 B2
Microlens structures for semiconductor device with single-photon avalanche diode pixels
Marc Allen Sulfridge, Boise, ID (US); Swarnal Borthakur, Boise, ID (US); and Nathan Wayne Chapman, Middleton, ID (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Jan. 4, 2023, as Appl. No. 18/149,862.
Application 18/149,862 is a division of application No. 16/684,033, filed on Nov. 14, 2019, granted, now 11,626,440.
Prior Publication US 2023/0154959 A1, May 18, 2023
Int. Cl. H01L 27/146 (2006.01); H01L 31/107 (2006.01)
CPC H01L 27/14627 (2013.01) [H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H01L 31/107 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a plurality of single-photon avalanche diode pixels, wherein each of the single-photon avalanche diode pixels has an active region and an inactive region;
a plurality of microlenses comprising microlens material, wherein each of the microlenses covers the active region of a respective one of the single-photon avalanche diode pixels;
a containment grid that covers the inactive regions of the single-photon avalanche diode pixels, wherein portions of the containment grid are interposed between adjacent microlenses of the plurality of microlenses, and wherein the portions of the containment grid each have a tapered shape between the microlenses; and
material that is phyllic to the microlens material on the containment grid.