US 12,034,019 B2
Light receiving element, solid-state imaging device, and electronic device
Shinichiro Kurihara, Kanagawa (JP)
Assigned to SONY SEMICONDUCTORSOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/998,520
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Apr. 6, 2021, PCT No. PCT/JP2021/014626
§ 371(c)(1), (2) Date Nov. 11, 2022,
PCT Pub. No. WO2021/241010, PCT Pub. Date Dec. 2, 2021.
Claims priority of application No. 2020-090535 (JP), filed on May 25, 2020.
Prior Publication US 2023/0246042 A1, Aug. 3, 2023
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14614 (2013.01) [H01L 27/14603 (2013.01); H01L 27/14627 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A light receiving element, comprising:
a photoelectric conversion region that constitutes a pixel;
a floating diffusion region of a first conductivity type that is on a first surface side of the photoelectric conversion region;
a plurality of transfer gate electrodes on the first surface side of the photoelectric conversion region, wherein
a first transfer gate electrode of the plurality of transfer gate electrodes is spaced apart from a second transfer gate electrode of the plurality of transfer gate electrodes; and
a gate insulating film between the photoelectric conversion region and the plurality of transfer gate electrodes, wherein
the plurality of transfer gate electrodes are symmetrical about the floating diffusion region on a planar pattern.