US 12,034,017 B2
Sensor chip and electronic device
Shinichiro Yagi, Kanagawa (JP); Yusuke Otake, Kanagawa (JP); and Kyosuke Ito, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Apr. 13, 2023, as Appl. No. 18/134,084.
Application 18/134,084 is a continuation of application No. 17/600,674, granted, now 11,670,649, previously published as PCT/JP2020/011368, filed on Mar. 16, 2020.
Claims priority of application No. 2019-073485 (JP), filed on Apr. 8, 2019.
Prior Publication US 2023/0253420 A1, Aug. 10, 2023
Int. Cl. H01L 27/146 (2006.01); G01S 7/4863 (2020.01); G01S 17/894 (2020.01); H04N 25/702 (2023.01); H04N 25/79 (2023.01)
CPC H01L 27/14605 (2013.01) [G01S 7/4863 (2013.01); G01S 17/894 (2020.01); H01L 27/14629 (2013.01); H01L 27/1463 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14665 (2013.01); H04N 25/702 (2023.01); H04N 25/79 (2023.01)] 20 Claims
OG exemplary drawing
 
1. A sensor chip, comprising:
a pixel array section, wherein the pixel array section includes a pixel area in which a plurality of pixels is arranged in rows and columns,
wherein each pixel in the plurality of pixels includes an avalanche photodiode element,
wherein the pixel area includes a dummy pixel area and a reference pixel area,
wherein the dummy pixel area includes a plurality of dummy pixels, and
wherein, for each dummy pixel in the plurality of dummy pixels, at least one of a cathode electric potential of the avalanche photodiode element and an anode electric potential of the avalanche photodiode element is in a floating state.