US 12,034,001 B2
Concept for silicon carbide power devices
Adolf Schoner, Hasselby (SE); Nicolas Thierry-Jebali, Stockholm (SE); Christian Vieider, Uppsala (SE); Sergey Reshanov, Upplands-Vasby (SE); Hossein Elahipanah, Sollentuna (SE); and Wlodzimierz Kaplan, Sollentuna (SE)
Assigned to II-VI ADVANCED MATERIALS, LLC, Pine Brook, NJ (US)
Filed by II-VI Delaware, Inc., Wilmington, DE (US)
Filed on Apr. 4, 2023, as Appl. No. 18/295,743.
Application 18/295,743 is a continuation of application No. 17/577,226, filed on Jan. 17, 2022, granted, now 11,652,099, issued on May 16, 2023.
Application 17/577,226 is a continuation of application No. 16/647,067, granted, now 11,276,681, issued on Mar. 15, 2022, previously published as PCT/EP2018/074905, filed on Sep. 14, 2018.
Claims priority of application No. 1751136-1 (SE), filed on Sep. 15, 2017.
Prior Publication US 2023/0246020 A1, Aug. 3, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01); H01L 21/82 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/36 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/0605 (2013.01) [H01L 21/8213 (2013.01); H01L 27/0629 (2013.01); H01L 29/0615 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01); H01L 29/41741 (2013.01); H01L 29/66068 (2013.01); H01L 29/7806 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A power device, comprising:
a high voltage module comprising:
a substrate having a first conductivity type;
a first drift layer on the substrate, the first drift layer having one of (i) a same conductivity type as the substrate and (ii) an opposite conductivity type as the substrate;
a buried grid on the first drift layer, the buried grid having a conductivity type opposite to the conductivity type of the first drift layer; and
a second drift layer on the first drift layer and the buried grid, the second drift layer having conductivity type of a same conductivity type as the first drift layer; and
a low voltage module in electrical contact with the high voltage module, the low voltage module having at least one low voltage device with a blocking voltage less than a blocking voltage of the high voltage module,
wherein the at least one low voltage device has at least one other epitaxial layer as a common layer with the high voltage module.