US 12,033,978 B2
Semiconductor package and manufacturing method thereof
Ying-Ching Shih, Hsinchu (TW); Chih-Wei Wu, Yilan County (TW); and Szu-Wei Lu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Oct. 11, 2022, as Appl. No. 17/964,010.
Application 16/934,041 is a division of application No. 16/116,892, filed on Aug. 29, 2018, granted, now 10,756,058, issued on Aug. 25, 2020.
Application 17/964,010 is a continuation of application No. 16/934,041, filed on Jul. 21, 2020, granted, now 11,482,508.
Prior Publication US 2023/0030455 A1, Feb. 2, 2023
Int. Cl. H01L 23/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 25/0655 (2013.01) [H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 23/5381 (2013.01); H01L 24/09 (2013.01); H01L 24/16 (2013.01); H01L 25/50 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/16145 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first stacked layer over a carrier;
providing a semiconductor die, and forming a second stacked layer located on a rear surface of the semiconductor die;
after forming the second stacked layer on the semiconductor die, disposing the semiconductor die over the first stacked layer by joining the second stacked layer with the first stacked layer, and aligning a sidewall of the first stacked layer with a sidewall of the second stacked layer;
forming an encapsulating material to encapsulate the semiconductor die and to cover the sidewall of the first stacked layer and the sidewall of the second stacked layer; and
removing the carrier.