US 12,033,973 B2
Semiconductor package
Soohyun Nam, Yongin-si (KR); and Younglyong Kim, Anyang-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 6, 2021, as Appl. No. 17/367,995.
Claims priority of application No. 10-2020-0173679 (KR), filed on Dec. 11, 2020.
Prior Publication US 2022/0189907 A1, Jun. 16, 2022
Int. Cl. H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01)
CPC H01L 24/73 (2013.01) [H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 25/0655 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/32056 (2013.01); H01L 2224/32059 (2013.01); H01L 2224/32235 (2013.01); H01L 2224/73204 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/1815 (2013.01); H01L 2924/182 (2013.01); H01L 2924/3512 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
an interposer substrate;
first to third semiconductor chips on the interposer substrate to face each other;
an underfill part between each of the first to third semiconductor chips and the interposer substrate;
a first side-fill part extending upward from lower ends of side walls of the first to third semiconductor chips; and
a second side-fill part between the side walls of the first to third semiconductor chips and extending from the first side-fill part to upper ends of the side walls of the first to third semiconductor chips,
wherein an upper surface of the first semiconductor chip comprises a first edge facing the second semiconductor chip, a second edge facing the third semiconductor chip, and a first corner at which the first edge meets the second edge,
an upper surface of the second semiconductor chip comprises a third edge facing the first semiconductor chip, a fourth edge facing the third semiconductor chip, and a second corner at which the third edge meets the fourth edge,
the second side-fill part extends from the first corner of the first semiconductor chip along each of the first edge and the second edge of the first semiconductor chip and extends from the second corner of the second semiconductor chip along each of the third edge and the fourth edge of the second semiconductor chip, and
a coefficient of thermal expansion of the second side-fill part is less than a coefficient of thermal expansion of the first side-fill part.