US 12,033,949 B2
Package structure with bridge die laterally wrapped by insulating encapsulant and surrounded by through vias and method of forming the package structure
Yu-Hung Lin, Taichung (TW); Chih-Wei Wu, Yilan County (TW); Chia-Nan Yuan, Hsinchu (TW); Ying-Ching Shih, Hsinchu (TW); An-Jhih Su, Taoyuan (TW); Szu-Wei Lu, Hsinchu (TW); Ming-Shih Yeh, Hsinchu County (TW); and Der-Chyang Yeh, Hsin-Chu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Oct. 5, 2022, as Appl. No. 17/960,767.
Application 17/960,767 is a continuation of application No. 17/148,568, filed on Jan. 14, 2021, granted, now 11,482,497.
Prior Publication US 2023/0036283 A1, Feb. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/538 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01)
CPC H01L 23/5389 (2013.01) [H01L 21/56 (2013.01); H01L 21/76898 (2013.01); H01L 23/295 (2013.01); H01L 23/3135 (2013.01); H01L 23/481 (2013.01); H01L 23/5381 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/24 (2013.01); H01L 24/25 (2013.01); H01L 24/82 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/24105 (2013.01); H01L 2224/24146 (2013.01); H01L 2224/25171 (2013.01); H01L 2224/25174 (2013.01); H01L 2224/2518 (2013.01); H01L 2224/82101 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
an insulating encapsulant;
through insulator vias penetrating through the insulating encapsulant;
a bridge die, laterally wrapped by the insulating encapsulant and surrounded by the through insulator vias; and
a first die and a second die, disposed side-by-side and disposed over the insulating encapsulant, wherein the bridge die electrically connects the first die and the second die, and the bridge die includes:
a semiconductor substrate;
an interconnection structure disposed on the semiconductor substrate;
through substrate vias, embedded in the semiconductor substrate and connected to the interconnection structure; and
conductive vias, wrapped by an encapsulant layer and connected to the through substrate vias.