US 12,033,890 B2
Patterning interconnects and other structures by photo-sensitizing method
Wei-Jen Lo, Hsinchu (TW); Po-Cheng Shih, Hsinchu (TW); Syun-Ming Jang, Hsinchu (TW); and Tze-Liang Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 28, 2023, as Appl. No. 18/309,131.
Application 18/309,131 is a continuation of application No. 17/094,700, filed on Nov. 10, 2020, granted, now 11,676,855.
Claims priority of provisional application 62/981,862, filed on Feb. 26, 2020.
Prior Publication US 2023/0268224 A1, Aug. 24, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/768 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01)
CPC H01L 21/76823 (2013.01) [G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/2004 (2013.01); G03F 7/2022 (2013.01); H01L 21/0274 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a device, the method comprising:
forming over a substrate a layer of photo-sensitive material, the photo-sensitive material having a first dielectric value;
forming a mask over a first region of the photo-sensitive material while leaving a second region of the photo-sensitive material exposed; and
changing the dielectric value of the second region of the photo-sensitive material to a second, lower dielectric value by exposing the second region of the photo-sensitive material to a pre-selected wavelength of light energy, while leaving the dielectric value of the first region of the photo-sensitive material unchanged.
 
9. A method comprising:
forming a photo-sensitive material over a substrate;
forming a patterned cap layer over the photo-sensitive material;
using the patterned cap layer, selectively exposing a first portion of the photo-sensitive material to a pre-selected wavelength of light energy to change at least one material property of the first portion of the photo-sensitive material, while leaving the at least one material property of a second portion of the photo-sensitive material unchanged by the exposure process; and
preventing a second portion of the photo-sensitive material from being exposed to the pre-selected wavelength of light energy.
 
17. A method of forming a device, the method comprising:
forming over a substrate a layer of photo-sensitive material 38, 78;
forming over a first region of the photo-sensitive material a cap layer 12, 42 the cap layer being transparent to a pre-selected wavelength of light energy;
forming over a second region of the photo-sensitive material a plug 50, 86, the plug being opaque to the pre-selected wavelength of light energy; and
converting the first region of the photo-sensitive material from a dielectric to a conductor by exposing the first region to the pre-selected wavelength of light energy, while leaving the second region of the photo-sensitive material unconverted as a dielectric.