US 12,033,889 B2
Semiconductor device structure and methods of forming the same
Hsin-Yen Huang, New Taipei (TW); Ting-Ya Lo, Hsinchu (TW); Shao-Kuan Lee, Kaohsiung (TW); Chi-Lin Teng, Taichung (TW); Cheng-Chin Lee, Taipei (TW); Hsiaokang Chang, Hsinchu (TW); and Shau-Lin Shue, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 16, 2023, as Appl. No. 18/097,418.
Application 18/097,418 is a continuation of application No. 17/146,821, filed on Jan. 12, 2021, granted, now 11,557,511.
Prior Publication US 2023/0154789 A1, May 18, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/7682 (2013.01) [H01L 21/76834 (2013.01); H01L 21/76837 (2013.01); H01L 21/76841 (2013.01); H01L 21/76885 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01); H01L 23/53209 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An interconnection structure, comprising:
a dielectric layer;
a first conductive feature disposed in the dielectric layer;
a conductive layer disposed over the dielectric layer, wherein the conductive layer includes a first portion and a second portion adjacent the first portion, and the second portion of the conductive layer is disposed over the first conductive feature; and
a support layer disposed between the first and second portions of the conductive layer, wherein an air gap is located below the support layer and between the first and second portions of the conductive layer, and the support layer includes a first portion extending along a side surface of the first portion of the conductive layer and a second portion extending along a side surface of the second portion of the conductive layer.