US 12,033,869 B2
Method of etching object and etching device
Isao Takahashi, Kyoto (JP)
Assigned to FLOSFIA INC., Kyoto (JP)
Filed by FLOSFIA INC., Kyoto (JP)
Filed on Jun. 24, 2020, as Appl. No. 16/910,480.
Claims priority of application No. 2019-121727 (JP), filed on Jun. 28, 2019.
Prior Publication US 2020/0411331 A1, Dec. 31, 2020
Int. Cl. H01L 21/465 (2006.01); H01L 21/67 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01)
CPC H01L 21/465 (2013.01) [H01L 21/6708 (2013.01); H01L 29/66969 (2013.01); H01L 29/7802 (2013.01); H01L 29/872 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising: manufacturing the semiconductor device by:
supplying a carrier gas and/or a dilution gas to a mist generator containing an etching liquid;
generating atomized droplets from the etching liquid using an ultrasonic transducer;
supplying the atomized droplets inside an etching chamber onto an object comprising a heated crystalline oxide semiconductor layer and/or a substrate inside the etching chamber; and
etching the object comprising the crystalline oxide semiconductor layer and/or the substrate with the atomized droplets at a temperature higher than 200° C.