CPC H01L 21/32135 (2013.01) [C23F 4/02 (2013.01); G03F 7/0042 (2013.01); G03F 7/0043 (2013.01); G03F 7/265 (2013.01); G03F 7/36 (2013.01)] | 6 Claims |
1. A method of developing a metal oxo photoresist, comprising:
providing a substrate with the metal oxo photoresist into a vacuum chamber, wherein the metal oxo photoresist comprises exposed regions and unexposed regions, and wherein the unexposed regions comprise a higher carbon concentration than the exposed regions;
vaporizing a halogenating agent into the vacuum chamber, wherein the halogenating agent reacts with the exposed regions to produce a volatile byproduct, wherein the halogenating agent comprises methanesulfonyl chloride (CH3SO2Cl), trichloromethanesulfonyl chloride (CCl3SO2Cl), 4-toluenesulfonyl chloride (tosyl chloride), oxalyl chloride (ClCOCOCl), tert-butyl hypochlorite ((CH3)3COCl), N-chlorophthalimide, 1,3-dichloro-5,5-dimethylhydantoin, trimethylsilyl chloride, PCl5, CCl3Br, 1,2-dibromo-1,1,2,2-tetrachloroethane (Cl2CBrCBrCl2), PBr3, N-bromosuccinimide, N-bromoacetamide, 2-bromo-2-cyano-N,N-dimethylacetamide, 1,3-dibromo-5,5-dimethylhydantoin, 2,4,4,6-tetrabromo-2,5-cyclohexadienone, trimethylsilyl bromide, SO2Cl2 (sulfuryl chloride), or SO2Br2 (sulfuryl bromide); and
purging the vacuum chamber.
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