US 12,033,864 B2
Substrate processing method and substrate processing apparatus
Hiromi Miyashita, Miyagi (JP); and Rei Shoji, Miyagi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jan. 25, 2022, as Appl. No. 17/648,840.
Claims priority of application No. 2021-012453 (JP), filed on Jan. 28, 2021.
Prior Publication US 2022/0238348 A1, Jul. 28, 2022
Int. Cl. H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/31116 (2013.01) [H01J 37/32449 (2013.01); H01L 21/0206 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A substrate processing method comprising:
(a) providing a substrate into a chamber, the substrate including a silicon oxide film and a mask of an organic film on the silicon oxide film;
(b) etching the silicon oxide film with a first plasma generated from a first process gas, the first process gas including a fluorocarbon gas and a hydrogen-containing gas; and
(c) further etching the silicon oxide film with a second plasma generated from a second process gas, the second process gas including a fluorocarbon gas,
wherein a flow rate of the hydrogen-containing gas included in the first process gas is less than a flow rate of the fluorocarbon gas included in the first process gas.