US 12,033,854 B2
Method for manufacturing a composite structure comprising a thin layer of monocrystalline SiC on a carrier substrate of polycrystalline SiC
Yann Sinquin, Grenoble (FR); Jean-Marc Bethoux, La Buisse (FR); and Damien Radisson, Brignoud (FR)
Assigned to Soitec, Bernin (FR)
Appl. No. 17/632,021
Filed by Soitec, Bernin (FR)
PCT Filed Jul. 2, 2020, PCT No. PCT/FR2020/051159
§ 371(c)(1), (2) Date Feb. 1, 2022,
PCT Pub. No. WO2021/019137, PCT Pub. Date Feb. 4, 2021.
Claims priority of application No. 1908840 (FR), filed on Aug. 1, 2019.
Prior Publication US 2022/0270875 A1, Aug. 25, 2022
Int. Cl. H01L 21/02 (2006.01)
CPC H01L 21/02529 (2013.01) [H01L 21/02032 (2013.01); H01L 21/02378 (2013.01); H01L 21/0243 (2013.01); H01L 21/02447 (2013.01); H01L 21/02502 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for producing a composite structure comprising a thin layer of monocrystalline silicon carbide on a carrier substrate made of polycrystalline silicon carbide, the method comprising:
providing an initial substrate comprising monocrystalline silicon carbide;
depositing an intermediate layer of polycrystalline silicon carbide at a temperature higher than 1000° C. on the initial substrate, a thickness of the intermediate layer being greater than or equal to 1.5 microns;
implanting light ionic species through the intermediate layer to form a buried brittle plane in the initial substrate, delimiting the thin layer between the buried brittle plane and the intermediate layer; and
depositing an additional layer of polycrystalline silicon carbide at a temperature higher than 1000° C. on the intermediate layer, the intermediate layer and the additional layer forming the carrier substrate, the initial substrate separating along the buried brittle plane during the deposition of the additional layer.