US 12,033,849 B2
Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane
Yuko Kengoyama, Kawasaki (JP); Hidemi Suemori, Hillsboro, OR (US); and Ryu Nakano, Sagamihara (JP)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Dec. 8, 2022, as Appl. No. 18/077,280.
Application 18/077,280 is a continuation of application No. 16/999,065, filed on Aug. 21, 2020, granted, now 11,527,400.
Claims priority of provisional application 62/891,160, filed on Aug. 23, 2019.
Prior Publication US 2023/0112490 A1, Apr. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01)
CPC H01L 21/02164 (2013.01) [H01L 21/0228 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of depositing a silicon oxide film using bis(diethylamino)silane (BDEAS) on a substrate in a reaction space by plasma-enhanced atomic layer deposition (PEALD), each repeating deposition cycle of PEALD comprising steps of:
(i) adsorbing BDEAS on the substrate;
(ii) purging the reaction space;
(iii) exposing the substrate on which BDEAS is adsorbed to an oxidizer gas in an atmosphere in the reaction space, and applying an RF power, thereby depositing a monolayer or sublayer of silicon oxide, wherein the atmosphere has an oxygen concentration of 30% to 70% by volume in a carrier gas; and
(iv) purging the reaction space;
wherein the oxidizer gas is fed to the reaction space continuously throughout the deposition cycle, and
wherein a pressure within the reaction space is less than 1000 Pa.