US 12,033,846 B2
Co-deposition of cesium telluride photocathode and X-ray fluorescence controller co-deposition of cesium telluride photocathode
Mengjia Gaowei, Stony Brook, NY (US); John Smedley, White Rock, NM (US); John Walsh, Upton, NY (US); Jiajie Cen, San Jose, CA (US); and John Jay Sinsheimer, Centereach, NY (US)
Assigned to U.S. Department of Energy, Washington, DC (US)
Filed by United States Department of Energy, Washington, DC (US)
Filed on Oct. 15, 2020, as Appl. No. 17/071,501.
Claims priority of provisional application 62/915,138, filed on Oct. 15, 2019.
Prior Publication US 2021/0118640 A1, Apr. 22, 2021
Int. Cl. H01J 9/12 (2006.01); C01B 19/00 (2006.01); C23C 14/06 (2006.01); C23C 14/24 (2006.01); C23C 14/52 (2006.01)
CPC H01J 9/12 (2013.01) [C01B 19/007 (2013.01); C23C 14/06 (2013.01); C23C 14/24 (2013.01); C23C 14/52 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method of growing photocathodes, comprising:
exposing a substrate of Si wafer to an alkali source comprising K and Li;
controlling co-evaporating growth and co-deposition; forming a growth including Te;
monitoring a stoichiometry of the growth, and forming the photocathodes having a 2 nm surface roughness and high quantum efficiency of 19% at 266 nm.