US 12,033,806 B2
Method of manufacturing a trench capacitor with wafer bow
Seung Mo Jo, Cheongju-si (KR)
Assigned to SK keyfoundry Inc., Cheongju-si (KR)
Filed by SK keyfoundry Inc., Cheongju-si (KR)
Filed on Jan. 5, 2022, as Appl. No. 17/568,908.
Claims priority of application No. 10-2021-0090132 (KR), filed on Jul. 9, 2021.
Prior Publication US 2023/0012211 A1, Jan. 12, 2023
Int. Cl. H01G 4/35 (2006.01); H01L 23/522 (2006.01); H01L 23/64 (2006.01); H01L 49/02 (2006.01)
CPC H01G 4/35 (2013.01) [H01L 23/642 (2013.01); H01L 28/60 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A trench capacitor manufacturing method, comprising:
forming a first deep trench and a second deep trench in a substrate;
depositing at least one dielectric layer and at least one conductive layer alternately in the first deep trench and the second deep trench;
performing a gap-fill process by depositing a gap-fill insulating layer on the at least one conductive layer and the at least one dielectric layer, wherein a first void and a second void are formed in the first deep trench and the second deep trench, respectively;
patterning the gap-fill insulating layer to form a first gap-fill insulating film and a second gap-fill insulating film spaced apart from the first gap-fill insulating film on the first and second deep trenches, respectively;
patterning the at least one conductive layer using the first gap-fill insulating film and the second gap-fill insulating film as a mask to form a first upper electrode and a second upper electrode on the first and second deep trenches, respectively;
depositing a first inter-layer insulating film on the first gap-fill insulating film, the second gap-fill insulating film, the first upper electrode, and the second upper electrode;
forming first level metal interconnects on the first inter-layer insulating film;
forming a second inter-layer insulating film on the first inter-layer insulating film; and
forming second level metal interconnects on the second inter-layer insulating film.
 
7. A trench capacitor manufacturing method, comprising:
forming a first deep trench and a second deep trench in a substrate;
sequentially forming a lower dielectric layer, a lower conductive layer, an upper dielectric layer, and an upper conductive layer on the first and second deep trenches;
performing a gap-fill process by depositing a gap-fill insulating layer on the upper conductive layer, wherein a void is formed in the gap-fill insulating layer;
patterning the gap-fill insulating layer to form a first gap-fill insulating film and a second gap-fill insulating film spaced apart from the first gap-fill insulating film on the first and second deep trenches, respectively;
patterning the upper conductive layer to form a first upper electrode and a second upper electrode;
depositing a first inter-layer insulating film on the first gap-fill insulating film, the second gap-fill insulating film, the first upper electrode, and the second upper electrode;
forming first level metal interconnects on the first inter-layer insulating film;
forming a second inter-layer insulating film on the first inter-layer insulating film; and
forming second level metal interconnects on the second inter-layer insulating film.
 
11. A trench capacitor manufacturing method, the method comprising:
forming a deep trench in a substrate;
sequentially depositing a lower dielectric layer, a lower conductive layer, an upper dielectric layer, and an upper conductive layer in the deep trench;
performing a gap-fill process by depositing a gap-fill insulating layer on the upper conductive layer, wherein the gap-fill insulating layer is disposed in the deep trench and a void is formed in the deep trench;
patterning the gap-fill insulating layer to form a gap-fill insulating film pattern on the deep trench;
patterning the upper conductive layer to form an upper electrode on the deep trench using the gap-fill insulating film pattern as a mask;
patterning the lower conductive layer to form a lower electrode on the substrate;
depositing a first inter-layer insulating film on the gap-fill insulating film pattern, the upper electrode, and the lower electrode;
forming a first level metal interconnect on the first inter-layer insulating film;
forming a second inter-layer insulating film on the first inter-layer insulating film; and
forming a second level metal interconnect on the second inter-layer insulating film,
wherein the first level metal interconnect is in direct contact with the upper electrode, and the first level metal interconnect overlaps the void in the deep trench.