US 12,033,799 B2
Capacitor structure and manufacturing method thereof
Xingsong Su, Hefei (CN); Weiping Bai, Hefei (CN); and Mengkang Yu, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Appl. No. 17/601,702
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
PCT Filed Jun. 21, 2021, PCT No. PCT/CN2021/101299
§ 371(c)(1), (2) Date Oct. 5, 2021,
PCT Pub. No. WO2022/166075, PCT Pub. Date Aug. 11, 2022.
Claims priority of application No. 202110150428.4 (CN), filed on Feb. 3, 2021.
Prior Publication US 2023/0103489 A1, Apr. 6, 2023
Int. Cl. H01G 4/10 (2006.01); H01G 4/33 (2006.01)
CPC H01G 4/10 (2013.01) [H01G 4/33 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A manufacturing method for capacitor structure, comprising:
forming a dielectric layer on a first electrode;
wherein the dielectric layer comprises a metal oxide layer doped with a preset oxide, the metal oxide layer doped with the preset oxide comprises stacked metal oxide layer and preset oxide layer, and an interface between the metal oxide layer and the preset oxide layer;
wherein the interface between the metal oxide layer and the preset oxide layer comprises metal-oxygen-non-metal covalent bonds, part of the preset oxide and the metal oxide share oxygen atoms, which reduces a oxygen content in the metal oxide layer doped with the preset oxide and avoids delamination of the preset oxide layer and the metal oxide layer;
wherein the metal oxide comprises hafnium oxide, zirconium oxide or perovskite, and the preset oxide comprises silicon oxide; and
forming a second electrode on the dielectric layer, wherein the first electrode, the dielectric layer and the second electrode constitute a capacitor structure.