US 12,033,707 B2
Nonvolatile memory device and operation method thereof
Kyung-Min Kang, Suwon-si (KR); Dongku Kang, Suwon-si (KR); Su Chang Jeon, Suwon-si (KR); and Won-Taeck Jung, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 17, 2023, as Appl. No. 18/301,377.
Application 18/301,377 is a continuation of application No. 16/941,956, filed on Jul. 29, 2020, granted, now 11,651,829.
Application 16/941,956 is a continuation in part of application No. 16/692,161, filed on Nov. 22, 2019, granted, now 11,625,302.
Claims priority of application No. 10-2019-0071718 (KR), filed on Jun. 17, 2019.
Prior Publication US 2023/0253059 A1, Aug. 10, 2023
Int. Cl. G11C 16/06 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/28 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/3481 (2013.01) [G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/28 (2013.01); G11C 16/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An operation method of a nonvolatile memory device, the operation method comprising:
receiving a program command, an address, and a plurality of page data from a memory controller, the address indicating a selected word-line;
performing a first program operation on an unselected word-line different from the selected word-line, based on one page data of the plurality of page data in response to receiving the program command, the address, and the plurality of page data;
performing a reading operation to read previous page data from the selected word-line;
performing a second program operation on the selected word-line, based on the read previous page data and remaining page data of the plurality of page data; and
performing a recovery operation for recovering the previous page data in response to a failure of the second program operation,
wherein the first program operation, the second program operation, and the reading operation occur in response to the program command.