US 12,033,689 B2
Amplification control method and circuit, sensitive amplifier and semiconductor memory
Daoxun Wu, Hefei (CN); and Weibing Shang, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jun. 13, 2022, as Appl. No. 17/838,596.
Application 17/838,596 is a continuation of application No. PCT/CN2022/079701, filed on Mar. 8, 2022.
Claims priority of application No. 202111658991.9 (CN), filed on Dec. 31, 2021.
Prior Publication US 2023/0230631 A1, Jul. 20, 2023
Int. Cl. G11C 11/4091 (2006.01)
CPC G11C 11/4091 (2013.01) 20 Claims
OG exemplary drawing
 
1. An amplification control method, applied to an amplification circuit, comprising:
receiving a preset instruction, and determining an isolation power value and a control instruction signal according to the preset instruction;
generating an isolation control signal according to the isolation power value and the control instruction signal; and
receiving, by the amplification circuit, the isolation control signal and a target signal to be processed according to the preset instruction, processing the signal to be processed, and completing the preset instruction.