US 12,033,675 B2
Cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices
Susumu Okamura, San Jose, CA (US); Quang Le, San Jose, CA (US); Brian R. York, San Jose, CA (US); Cherngye Hwang, San Jose, CA (US); Randy G. Simmons, San Jose, CA (US); Kuok San Ho, Emerald Hills, CA (US); and Hisashi Takano, San Jose, CA (US)
Assigned to Western Digital Technologies, Inc., San Jose, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US)
Filed on Sep. 29, 2022, as Appl. No. 17/956,786.
Prior Publication US 2024/0112840 A1, Apr. 4, 2024
Int. Cl. G11B 5/31 (2006.01); G11B 5/235 (2006.01); G11B 5/37 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01); C22C 19/07 (2006.01); G11B 5/00 (2006.01); G11B 5/39 (2006.01)
CPC G11B 5/3146 (2013.01) [G11B 5/235 (2013.01); G11B 5/3133 (2013.01); G11B 5/314 (2013.01); G11B 5/37 (2013.01); H01F 10/329 (2013.01); H10B 61/00 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/80 (2023.02); C22C 19/07 (2013.01); G11B 2005/0024 (2013.01); G11B 5/39 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A spin-orbit torque (SOT) device, comprising:
a first electrode;
a seed layer disposed over the first electrode;
a cap layer spaced from the seed layer, wherein the cap layer is nonmagnetic;
a spin Hall layer;
a nano layer (NL) between the seed layer and the cap layer, wherein the NL is magnetic;
a cobalt-boron (CoB) layer between the seed layer and the cap layer, wherein the CoB layer is ferromagnetic and the CoB layer is substantially free from materials other than cobalt (Co) and boron (B), wherein there is spin orbital coupling between the CoB layer and the spin Hall layer; and
a second electrode disposed over the cap layer.