US 12,033,424 B2
Light-sensitive sensor, array substrate, and electronic equipment
Jianfeng Yuan, Wuhan (CN); Fan Gong, Wuhan (CN); Fei Ai, Wuhan (CN); Jiyue Song, Wuhan (CN); Dewei Song, Wuhan (CN); and Shiyu Long, Wuhan (CN)
Assigned to WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Wuhan (CN)
Appl. No. 17/052,110
Filed by WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Wuhan (CN)
PCT Filed Aug. 14, 2020, PCT No. PCT/CN2020/109244
§ 371(c)(1), (2) Date Oct. 30, 2020,
PCT Pub. No. WO2022/016637, PCT Pub. Date Jan. 27, 2022.
Claims priority of application No. 202010706950.1 (CN), filed on Jul. 21, 2020.
Prior Publication US 2023/0112653 A1, Apr. 13, 2023
Int. Cl. G06V 40/13 (2022.01); G02F 1/1333 (2006.01); G02F 1/1335 (2006.01); G02F 1/1339 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G06F 3/041 (2006.01); G06F 3/044 (2006.01); H01L 31/0376 (2006.01); H01L 31/113 (2006.01)
CPC G06V 40/1318 (2022.01) [G02F 1/13338 (2013.01); G02F 1/133514 (2013.01); G02F 1/1339 (2013.01); G02F 1/134309 (2013.01); G02F 1/136286 (2013.01); G02F 1/1368 (2013.01); G06F 3/0412 (2013.01); G06F 3/0445 (2019.05); H01L 31/03762 (2013.01); H01L 31/1136 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light sensor, comprising:
a third metal layer comprising a second gate;
a second insulating layer disposed on the third metal layer;
a second semiconductor layer disposed on the second insulating layer; wherein the second semiconductor layer comprises conductive portions, and the conductive portions are disposed at both ends of the second semiconductor layer; and
a fourth metal layer disposed on the second semiconductor layer, wherein the fourth metal layer comprises a second source and a second drain,
wherein there is a gap between an orthographic projection of the second gate on a set plane and an orthographic projection of at least one of the second source or the second drain on the set plane.