US 12,033,062 B2
Reservoir element and neuromorphic element
Tomoyuki Sasaki, Tokyo (JP); and Tatsuo Shibata, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Appl. No. 17/265,622
Filed by TDK CORPORATION, Tokyo (JP)
PCT Filed Nov. 21, 2018, PCT No. PCT/JP2018/042988
§ 371(c)(1), (2) Date Feb. 3, 2021,
PCT Pub. No. WO2020/105139, PCT Pub. Date May 28, 2020.
Prior Publication US 2021/0303981 A1, Sep. 30, 2021
Int. Cl. H01L 27/22 (2006.01); G06N 3/063 (2023.01); G06N 3/08 (2023.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01); H10N 52/01 (2023.01)
CPC G06N 3/063 (2013.01) [G06N 3/08 (2013.01); H10B 61/00 (2023.02); H10N 50/85 (2023.02); H10N 52/01 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A reservoir element, comprising:
a plurality of magnetoresistive effect elements each having a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer laminated in a first direction, and separated from each other;
a spin orbit torque wiring that faces a part of at least one of the plurality of magnetoresistive effect elements; and
a spin-conductive layer that connects at least the magnetoresistive effect elements closest to each other of the plurality of magnetoresistive effect elements, and conducts spins,
wherein, when the magnetoresistive effect elements are seen in plan view from the first direction, the second ferromagnetic layer overlaps a part of the first ferromagnetic layer,
the spin orbit torque wiring faces a first portion that does not overlap the second ferromagnetic layer in the first ferromagnetic layer when seen in plan view from the first direction, and
the spin-conductive layer faces at least the first ferromagnetic layer each of the closest magnetoresistive effect elements.