CPC G06F 3/0634 (2013.01) [G06F 3/0625 (2013.01); G06F 3/0653 (2013.01); G06F 3/0673 (2013.01)] | 20 Claims |
1. A computer-implemented method for controlling a memory device performance feature, the method comprising:
selecting a first threshold voltage from among a temperature variable threshold voltage and a fixed threshold voltage;
determining that an operating voltage received from a voltage regulator external to a memory device has crossed the first threshold voltage in a first direction;
in response, enabling the memory device performance feature for a first memory device;
determining that the operating voltage has crossed a second threshold voltage in a second direction; and
in response, disabling the memory device performance feature for the first memory device.
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