| CPC G06F 3/0632 (2013.01) [G06F 3/0625 (2013.01); G06F 3/0679 (2013.01)] | 18 Claims |
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1. An operation method of a memory device which performs a self-refresh operation, the method comprising:
generating and sending a deep-sleep mode enter command signal from a memory controller to the memory device to place the memory device into a deep-sleep mode while the memory device is operating in a self-refresh mode;
changing a magnitude of an internal voltage of the memory device from a first voltage to a second voltage that is smaller than the first voltage, in response to the deep-sleep mode enter command signal; and
entering the self-refresh mode under control of the memory controller, wherein
the internal voltage is maintained at the second voltage during the self-refresh mode.
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