US 12,032,302 B2
Method and device for cleaning substrates
Chung-Hsuan Liu, Taichung (TW); Chen-Yang Lin, Zhudong Township (TW); Ku-Hsiang Sung, Taoyuan (TW); Da-Wei Yu, Hsinchu (TW); Kuan-Wen Lin, Taichung (TW); Chia-Jen Chen, Jhudong Township (TW); and Hsin-Chang Lee, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 6, 2021, as Appl. No. 17/367,835.
Claims priority of provisional application 63/166,893, filed on Mar. 26, 2021.
Prior Publication US 2022/0308464 A1, Sep. 29, 2022
Int. Cl. G03F 7/00 (2006.01); B08B 7/00 (2006.01); B08B 13/00 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); H05H 1/00 (2006.01)
CPC G03F 7/70925 (2013.01) [B08B 7/0035 (2013.01); B08B 13/00 (2013.01); H01L 21/02057 (2013.01); H01L 22/12 (2013.01); H05H 1/01 (2021.05)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor circuit, comprising:
retrieving a semiconductor wafer via a load port;
transferring the semiconductor wafer to a treatment device;
cleaning a particle from a surface of the semiconductor wafer in the treatment device by exposing the surface of the semiconductor wafer to a directional stream of plasma wind, generated by an ambient plasma generator, at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time to remove the particle from the surface of the semiconductor wafer; and
after the cleaning, disposing a photo resist layer on the semiconductor wafer.