US 12,032,292 B2
Photosensitive film and method for forming permanent mask resist
Hideki Etori, Saitama (JP); Keiko Kitamura, Saitama (JP); Yoshiaki Fuse, Tokyo (JP); and Nobuhito Komuro, Tokyo (JP)
Assigned to Resonac Corporation, Tokyo (JP); and KIMOTO CO., LTD., Saitama (JP)
Appl. No. 17/055,264
Filed by Showa Denko Materials Co., Ltd., Tokyo (JP); and KIMOTO CO., LTD., Saitama (JP)
PCT Filed May 9, 2019, PCT No. PCT/JP2019/018615
§ 371(c)(1), (2) Date Nov. 13, 2020,
PCT Pub. No. WO2019/221012, PCT Pub. Date Nov. 21, 2019.
Claims priority of application No. 2018-094573 (JP), filed on May 16, 2018.
Prior Publication US 2021/0124267 A1, Apr. 29, 2021
Int. Cl. G03F 7/11 (2006.01); G03F 7/09 (2006.01); G03F 7/30 (2006.01); H05K 3/00 (2006.01)
CPC G03F 7/092 (2013.01) [G03F 7/30 (2013.01); H05K 3/0076 (2013.01)] 8 Claims
 
1. A photosensitive film comprising:
a carrier film having a first surface whose surface roughness is 0.1 to 0.4 μm; and
a photosensitive layer formed on the first surface, wherein
a haze of the carrier film is 30 to 65%, and a spectral haze at a wavelength of 405 nm of the carrier film, as measured by providing a transparent resin layer in which a difference between a refractive index of the transparent resin layer and a refractive index of the photosensitive layer is within ±0.02 on the first surface, is 0.1 to 9.0%, and
the carrier film includes a base material layer, and a resin layer containing inorganic particles and a binder resin at a side of the first surface.
 
4. A method for forming a permanent mask resist, the method comprising:
a step of stacking the photosensitive film according to claim 1 on a substrate in order of the photosensitive layer and the carrier film;
a step of irradiating a predetermined portion of the photosensitive layer with active light rays via the carrier film to form a photocured part in the photosensitive layer; and
a step of peeling off the carrier film and then removing a portion other than the photocured part to form a resist pattern, wherein
a surface roughness of the resist pattern is 0.1 to 0.4 μm, and
the carrier film includes a base material layer, and a resin layer containing inorganic particles and a binder resin at a side of the first surface.