US 12,032,287 B2
Resist material and patterning process
Tomohiro Kobayashi, Joetsu (JP); Tsukasa Watanabe, Joetsu (JP); Hiroki Nonaka, Joetsu (JP); and Seiichiro Tachibana, Joetsu (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed by SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed on Jul. 22, 2020, as Appl. No. 16/935,615.
Claims priority of application No. 2019-154020 (JP), filed on Aug. 26, 2019.
Prior Publication US 2021/0063873 A1, Mar. 4, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/004 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01)
CPC G03F 7/0045 (2013.01) [G03F 7/0048 (2013.01); G03F 7/2004 (2013.01); G03F 7/2037 (2013.01); G03F 7/168 (2013.01); G03F 7/325 (2013.01)] 12 Claims
 
1. A resist material comprising:
(i) a compound (i-1), which is a (partial) condensate or a (partial) hydrolysis-condensate of a metal compound shown by the following general formula (A-1), or a compound (i-2), which is a reaction product of the compound (i-1) and a dihydric or trihydric alcohol shown by the following general formula (A-2),
(ii) a photo-acid generator,
wherein the component (ii) is a compound that generates a carboxylic acid shown by the following general formula (B-3), or a compound that generates a carboxylic acid shown by any of the following formula (T),

OG Complex Work Unit Chemistry
wherein R9 represents a linear, branched, or cyclic alkyl group, alkenyl group, or oxoalkyl group having 5 to 20 carbon atoms optionally including an ester bond or ether bond, or an aryl group, aralkyl group, or aryloxoalkyl group having 6 to 20 carbon atoms optionally including an ester bond or ether bond, and one or more hydrogen atoms are optionally substituted with a halogen atom, hydroxy group, carboxy group, or amino group; furthermore, R9 optionally represents a hydroxy group; Rf1 and Rf2 each independently represents a fluorine atom or trifluoromethyl group,

OG Complex Work Unit Chemistry
(iii) a basic compound, and
(iv) an organic solvent,
M(OR1A)4  (A-1)
wherein, M represents an element selected from titanium, zirconium, or hafnium; and R1A represents a linear or branched alkyl group having 1 to 12 carbon atoms; and
R2A(OH)m  (A-2)
wherein “m” represents 2 or 3; when “m” represents 2, R2A represents a divalent group selected from a substituted or unsubstituted, linear, branched, or cyclic alkylene group, alkenylene group, alkynylene group, or aralkylene group having 2 to 20 carbon atoms optionally including an ester bond or ether bond; when “m” represents 3, R2A represents a trivalent group, which is the divalent group having one hydrogen atom removed, and
wherein the resist material is a negative type resist material.