US 12,032,122 B2
Long-wave infrared anti-reflection protective film on ZnS substrate and preparation method thereof
Xu Zhang, Beijing (CN); Xun Qian, Beijing (CN); Peng Zi, Beijing (CN); and Shen Dang, Beijing (CN)
Assigned to SINOMA SYNTHETIC CRYSTALS CO., LTD., Beijing (CN); and BEIJING SINOMA SYNTHETIC CRYSTALS CO., LTD., Beijing (CN)
Filed by Sinoma Synthetic Crystals Co., Ltd., Beijing (CN); and Beijing Sinoma Synthetic Crystals Co., Ltd., Beijing (CN)
Filed on Dec. 10, 2021, as Appl. No. 17/643,739.
Claims priority of application No. 202011460832.3 (CN), filed on Dec. 11, 2020.
Prior Publication US 2022/0187504 A1, Jun. 16, 2022
Int. Cl. G02B 1/115 (2015.01); G02B 5/20 (2006.01)
CPC G02B 1/115 (2013.01) 11 Claims
OG exemplary drawing
 
1. A long-wave infrared anti-reflection protective film on a ZnS substrate, comprising: a ZnS film layer and a Y2O3 film layer sequentially arranged on the ZnS substrate;
wherein the ZnS substrate has a thickness of 2-15 mm;
the ZnS film layer has a thickness of 80-120 nm, the Y2O3 film layer has a thickness of 1000-1300 nm, and a structure of the Y2O3 film layer gradually changes from an inside to a surface.