US 12,031,231 B2
Low resistivity wafer
Yasuhito Narushima, Omura (JP); and Masayuki Uto, Omura (JP)
Assigned to SUMCO CORPORATION, Tokyo (JP)
Filed by SUMCO CORPORATION, Tokyo (JP)
Filed on Jan. 25, 2023, as Appl. No. 18/101,236.
Application 18/101,236 is a division of application No. 16/915,095, filed on Jun. 29, 2020, granted, now 11,598,023.
Prior Publication US 2023/0243066 A1, Aug. 3, 2023
Int. Cl. C30B 29/06 (2006.01); C30B 15/04 (2006.01); C30B 15/30 (2006.01); H01L 29/167 (2006.01)
CPC C30B 29/06 (2013.01) [C30B 15/04 (2013.01); C30B 15/30 (2013.01); H01L 29/167 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor wafer of about 200 mm in diameter cut from a single-crystal silicon that is doped with phosphorus, wherein the semiconductor wafer having a resistivity (Y, mΩ-cm) and a striation height (X, mm) wherein Y is at least Y=−1.588×10−6X3+1.331×10−4X2−1.195×10−2X+0.7649.