US 12,031,077 B2
Etching composition for metal nitride layer and etching method using the same
Hyeon Woo Park, Yongin-si (KR); Seok Hyeon Nam, Yongin-si (KR); Myung Ho Lee, Yongin-si (KR); and Myung Geun Song, Yongin-si (KR)
Assigned to ENF TECHNOLOGY CO., LTD., Yongin-si (KR)
Filed by ENF TECHNOLOGY CO., LTD., Yongin-si (KR)
Filed on Jun. 3, 2022, as Appl. No. 17/805,332.
Claims priority of application No. 10-2021-0072799 (KR), filed on Jun. 4, 2021.
Prior Publication US 2022/0396733 A1, Dec. 15, 2022
Int. Cl. C09K 13/10 (2006.01); C09K 13/00 (2006.01); C09K 13/04 (2006.01); C23F 1/00 (2006.01); C23F 1/14 (2006.01); C23F 1/16 (2006.01); C23F 1/44 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01)
CPC C09K 13/10 (2013.01) [C09K 13/00 (2013.01); C09K 13/04 (2013.01); C23F 1/00 (2013.01); C23F 1/14 (2013.01); C23F 1/16 (2013.01); C23F 1/44 (2013.01); H01L 21/30604 (2013.01); H01L 21/32134 (2013.01)] 9 Claims
 
1. An etching composition for a metal nitride layer comprising:
sulfuric acid, hydrogen peroxide, a boron-based compound, and water,
wherein the boron-based compound is contained in an amount of 0.0001 to 3 wt % with respect to a total weight of the etching composition, and
wherein the boron-based compound is one or more selected from boron trioxide, sodium borate, sodium perborate tetrahydrate, magnesium perborate, triphenylboroxin, and a boron compound represented by the following Chemical Formula 1:

OG Complex Work Unit Chemistry
wherein
L1, L2, and L3 are each independently a single bond or C1-C10 alkylene; and
R1, R2, and R3 are each independently hydrogen, C1-C10 alkyl, C1-C10 haloalkyl, C6-C10 aryl, mono-C1-C10 alkylamino, di-C1-C10 alkylamino, mono-C6-C10 arylamino, or di-C6-C10 arylamino, and
wherein the etching composition contains 75 to 95 wt % of sulfuric acid, 1 to 12 wt % of hydrogen peroxide, 0.0001 to 1 wt % of the boron-based compound, and a balance of water.