US 12,031,074 B1
Article comprising bonded substrate comprising nanocrystals and method of making and using same
Michael D. Sherburne, Albuquerque, NM (US)
Assigned to United States of America as represented by the Secretary of the Air Force, Wright-Patterson AFB, OH (US)
Filed by Government of the United States, as represented by the Secretary of the Air Force, Wright-Patterson AFB, OH (US)
Filed on Aug. 25, 2020, as Appl. No. 17/001,719.
Claims priority of provisional application 63/057,314, filed on Jul. 28, 2020.
Int. Cl. C09K 11/88 (2006.01); B05D 3/06 (2006.01); B05D 7/00 (2006.01); C09D 5/22 (2006.01); C09D 163/00 (2006.01); G01N 21/33 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01)
CPC C09K 11/883 (2013.01) [B05D 3/067 (2013.01); B05D 7/546 (2013.01); C09D 5/22 (2013.01); C09D 163/00 (2013.01); G01N 21/33 (2013.01); B05D 2350/60 (2013.01); B05D 2504/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method of using an article, said article comprising a surface, said surface comprising one or more pre-coatings; one or more coatings that comprise colloidal nanocrystals, said one or more pre-coatings coating said surface and said one or more coatings that comprise colloidal nanocrystals coating said one or more pre-coatings, said method comprising:
a) exposing the colloidal nanocrystals of said article to a wavelength of light that is lower than the emission wavelength of said colloidal nanocrystals;
b) collecting the wavelength emission from said colloidal nanocrystals that results from said colloidal nanocrystals being exposed to said wavelength of light that is lower than the emission wavelength of said colloidal nanocrystals, said wavelength emission comprising an emission wavelength plateau;
c) selecting one or more reference points on at least one side of the emission wavelength plateau of the nanocrystals and selecting one or more points at the emission wavelength plateau of the nanocrystals in real-time;
d) averaging, when more than one reference point is taken on at least one side of the emission wavelength plateau of the nanocrystals, said reference points taken on at least one side of the emission wavelength plateau of the nanocrystals;
e) averaging, when more than one reference point is taken at the emission wavelength plateau of the nanocrystals in real-time, said one or more points taken at the emission wavelength plateau of the nanocrystals in real-time;
f) calculating the difference between the average of the one or more reference points on at least one side of the emission wavelength plateau of the nanocrystals and the average of the one or more points taken at the emission wavelength plateau of the nanocrystals in real-time to yield the relative emission intensity as the sample is strained; with the proviso that when only a single reference point is taken on at least one side of the emission wavelength plateau of the nanocrystals and/or emission wavelength plateau of the nanocrystals in real-time, each of said single reference points, for purposes of this method, is treated as an average value;
g) comparing the relative emission intensity to a pre-existing stress strain data set to yield a strain value for said article.