US 12,031,070 B2
Quantum well nanocrystals with quaternary alloy structure for improved light absorption
Jooyeon Ahn, Suwon-si (KR); Hyeyeon Yang, Suwon-si (KR); Tae Gon Kim, Hwaseong-si (KR); Jongmin Lee, Hwaseong-si (KR); and Shin Ae Jun, Seongnam-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Mar. 12, 2021, as Appl. No. 17/199,613.
Claims priority of application No. 10-2020-0031618 (KR), filed on Mar. 13, 2020.
Prior Publication US 2021/0284907 A1, Sep. 16, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 35/24 (2006.01); C08J 5/18 (2006.01); C09K 11/06 (2006.01); C09K 11/54 (2006.01); C09K 11/56 (2006.01); C09K 11/62 (2006.01); C09K 11/70 (2006.01); H01L 51/00 (2006.01); H10K 50/115 (2023.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01)
CPC C09K 11/565 (2013.01) [C08J 5/18 (2013.01); C09K 11/06 (2013.01); C09K 11/54 (2013.01); C09K 11/62 (2013.01); C09K 11/70 (2013.01); H10K 50/115 (2023.02); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C08J 2300/12 (2013.01)] 30 Claims
OG exemplary drawing
 
1. A quantum dot comprising
a template comprising a first semiconductor nanocrystal,
a quantum well layer disposed on the template, and
a shell disposed on the quantum well layer, the shell comprising a second semiconductor nanocrystal,
wherein the quantum dot does not comprise cadmium,
wherein the first semiconductor nanocrystal comprises a first zinc chalcogenide,
wherein the second semiconductor nanocrystal comprises a second zinc chalcogenide,
wherein the quantum well layer comprises an alloy semiconductor nanocrystal comprising indium, phosphorus, zinc, and a chalcogen element, and
wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.