CPC C04B 35/571 (2013.01) [C01B 32/956 (2017.08); C01B 32/977 (2017.08); C04B 35/515 (2013.01); C04B 35/56 (2013.01); C04B 35/5603 (2013.01); C04B 35/80 (2013.01); C08G 77/20 (2013.01); C08G 77/50 (2013.01); C08L 83/00 (2013.01); C08L 83/04 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/44 (2013.01); C04B 2235/48 (2013.01); C04B 2235/483 (2013.01); C04B 2235/528 (2013.01); C04B 2235/5427 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/6581 (2013.01); C04B 2235/72 (2013.01); C04B 2235/721 (2013.01); C04B 2235/727 (2013.01); C04B 2235/77 (2013.01); C04B 2235/785 (2013.01); C04B 2235/94 (2013.01); C04B 2235/96 (2013.01); C08G 77/12 (2013.01); C08G 77/80 (2013.01)] | 9 Claims |
1. A filled silicon carbide composition comprising:
a. polymer derived SiC particles;
b. wherein the particles consist essentially of a ceramic having a filler bound into the ceramic;
c. wherein the filler is selected to provide a predetermined property to a silicon carbide wafer and wherein the filler comprises a dopant;
d. wherein the particles have less than 0.001% impurities; and
e. wherein the predetermined property is a p-type feature.
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