CPC B28D 5/0011 (2013.01) [B23K 26/0006 (2013.01); B23K 26/53 (2015.10); B28D 5/0064 (2013.01); B23K 2103/56 (2018.08)] | 18 Claims |
1. A method for separating wafers from donor substrates, the method comprising:
determining at least one individual property of a respective donor substrate, the at least one individual property comprising doping and/or crystal lattice dislocations of the respective donor substrate;
generating a donor substrate process data for the respective donor substrate, the donor substrate process data comprising analysis data that describes the at least one individual property of the respective donor substrate;
generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and
generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.
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