US 12,030,216 B2
Method for separating wafers from donor substrates
Marko David Swoboda, Dresden (DE); Christian Beyer, Freiberg (DE); Ralf Rieske, Dresden (DE); Albrecht Ullrich, Dresden (DE); and Jan Richter, Dresden (DE)
Assigned to Siltectra GmbH, Dresden (DE)
Filed by Siltectra GmbH, Dresden (DE)
Filed on Aug. 23, 2023, as Appl. No. 18/454,474.
Application 18/454,474 is a continuation of application No. 16/637,877, granted, now 11,787,083, previously published as PCT/EP2018/071438, filed on Aug. 7, 2018.
Claims priority of application No. 102017007586.7 (DE), filed on Aug. 11, 2017.
Prior Publication US 2023/0390961 A1, Dec. 7, 2023
Int. Cl. B28D 5/00 (2006.01); B23K 26/00 (2014.01); B23K 26/53 (2014.01); B23K 103/00 (2006.01)
CPC B28D 5/0011 (2013.01) [B23K 26/0006 (2013.01); B23K 26/53 (2015.10); B28D 5/0064 (2013.01); B23K 2103/56 (2018.08)] 18 Claims
OG exemplary drawing
 
1. A method for separating wafers from donor substrates, the method comprising:
determining at least one individual property of a respective donor substrate, the at least one individual property comprising doping and/or crystal lattice dislocations of the respective donor substrate;
generating a donor substrate process data for the respective donor substrate, the donor substrate process data comprising analysis data that describes the at least one individual property of the respective donor substrate;
generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and
generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.