US 12,030,125 B2
Bonded body and method for manufacturing same
Kei Anai, Ageo (JP); Shinichi Yamauchi, Ageo (JP); Jung-Lae Jo, Ageo (JP); and Takahiko Sakaue, Ageo (JP)
Assigned to Mitsui Mining & Smelting Co., Ltd., (JP)
Appl. No. 17/434,492
Filed by Mitsui Mining & Smelting Co., Ltd., Tokyo (JP)
PCT Filed Mar. 2, 2020, PCT No. PCT/JP2020/008653
§ 371(c)(1), (2) Date Aug. 27, 2021,
PCT Pub. No. WO2020/202970, PCT Pub. Date Oct. 8, 2020.
Claims priority of application No. 2019-068287 (JP), filed on Mar. 29, 2019.
Prior Publication US 2022/0139865 A1, May 5, 2022
Int. Cl. B22F 7/06 (2006.01); B22F 1/00 (2022.01); B22F 1/107 (2022.01); H01L 23/00 (2006.01)
CPC B22F 7/064 (2013.01) [B22F 1/00 (2013.01); B22F 1/107 (2022.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/32058 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/8384 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A bonded body comprising:
a bonding layer containing Cu; and
a semiconductor element bonded to the bonding layer,
wherein the bonding layer includes an extending portion laterally extending from a peripheral edge of the semiconductor element,
in a cross-sectional view in a thickness direction, the extending portion rises from a peripheral edge of a bottom of the semiconductor element or from a vicinity of the peripheral edge of the bottom of the semiconductor element, and includes a side wall substantially spaced apart from a side of the semiconductor element,
a side of the semiconductor element contacts the extending portion at a contact portion,
a length of the contact portion in the thickness direction in the cross-sectional view is 20 μm or less, and
a length of the contact portion in a planar direction in a plan view is 20 μm or less.