US 11,700,736 B2
Doped emissive layer for patterned QDS light emitting diodes (QLEDS) with balanced transport of charges
Enrico Angioni, Didcot (GB)
Assigned to SHARP KABUSHIKI KAISHA, Sakai (JP)
Filed by SHARP KABUSHIKI KAISHA, Sakai (JP)
Filed on Nov. 13, 2020, as Appl. No. 17/97,437.
Prior Publication US 2022/0158106 A1, May 19, 2022
Int. Cl. H10K 50/115 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 50/11 (2023.01); H10K 50/17 (2023.01); H10K 101/40 (2023.01)
CPC H10K 50/115 (2023.02) [H10K 50/11 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/171 (2023.02); H10K 2101/40 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a substrate;
an anode;
a cathode; and
an emissive layer between the anode and the cathode, the emissive layer comprising quantum dots having ligands, a cross-linked matrix comprising a cross-linkable charge transport material other than the ligands, and another charge transport material,
wherein:
the quantum dots are dispersed in the cross-linked matrix,
the another charge transport material alters mobility of charge carriers of the emissive layer,
the cross-linkable charge transport material is a cross-linkable hole transporting material,
the another charge transport material is an efficient hole transporting material that improves hole mobility more than the cross-linkable charge transport material, and
in the emissive layer, the quantum dots and the another charge transport material are layer-separated from each other such that the quantum dots are close to the cathode and the another charge transport material is close to the anode.