US 11,700,733 B2
Photoelectric conversion element and solid-state imaging device
Yuta Hasegawa, Kanagawa (JP); Nobuyuki Matsuzawa, Tokyo (JP); Yoshiaki Obana, Kanagawa (JP); Ichiro Takemura, Kanagawa (JP); Norikazu Nakayama, Kanagawa (JP); Masami Shimokawa, Kanagawa (JP); Tetsuji Yamaguchi, Kanagawa (JP); Iwao Yagi, Kanagawa (JP); and Hideaki Mogi, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Jun. 3, 2021, as Appl. No. 17/338,373.
Application 17/338,373 is a continuation of application No. 16/503,150, filed on Jul. 3, 2019, granted, now 11,056,539.
Application 16/503,150 is a continuation of application No. 15/575,086, granted, now 10,374,015, issued on Aug. 6, 2019, previously published as PCT/JP2016/064887, filed on May 19, 2016.
Claims priority of application No. 2015-110900 (JP), filed on May 29, 2015; and application No. 2016-072197 (JP), filed on Mar. 31, 2016.
Prior Publication US 2021/0320149 A1, Oct. 14, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H10K 39/32 (2023.01); H01L 27/146 (2006.01); H01L 31/10 (2006.01); H10K 19/20 (2023.01); H10K 30/30 (2023.01); H10K 71/16 (2023.01); H10K 85/60 (2023.01); H10K 85/20 (2023.01); H10K 85/30 (2023.01)
CPC H10K 39/32 (2023.02) [H01L 27/146 (2013.01); H01L 31/10 (2013.01); H10K 19/20 (2023.02); H10K 30/353 (2023.02); H10K 71/164 (2023.02); H10K 85/631 (2023.02); H01L 27/14647 (2013.01); H01L 27/14689 (2013.01); H10K 30/30 (2023.02); H10K 85/211 (2023.02); H10K 85/215 (2023.02); H10K 85/322 (2023.02); H10K 85/622 (2023.02); H10K 85/626 (2023.02); H10K 85/633 (2023.02); H10K 85/6572 (2023.02); H10K 85/6576 (2023.02); Y02E 10/549 (2013.01)] 34 Claims
OG exemplary drawing
 
1. A photoelectric conversion element, comprising:
a first electrode and a second electrode facing each other; and
a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another,
wherein the first organic semiconductor material is one of fullerenes and fullerene derivatives,
wherein the second organic semiconductor material is formed as a single-layer film having a maximal light absorption wavelength in a visible light region in a range from 500 nm to 600 nm both inclusive, and
wherein the third organic semiconductor material is formed as a single-layer film having a higher hole mobility than a hole mobility of the single-layer film of the second organic semiconductor material.