US 11,700,731 B2
Stacked structure for a vertical memory device
Il-Woo Kim, Hwaseong-si (KR); Sang-Ho Rha, Seongnam-si (KR); Byoung-Deog Choi, Suwon-si (KR); Ik-Soo Kim, Yongin-si (KR); and Min-Jae Oh, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 15, 2021, as Appl. No. 17/347,652.
Application 17/347,652 is a continuation of application No. 16/454,499, filed on Jun. 27, 2019, granted, now 11,063,060.
Claims priority of application No. 10-2018-0130092 (KR), filed on Oct. 29, 2018.
Prior Publication US 2021/0313347 A1, Oct. 7, 2021
Int. Cl. H10B 43/27 (2023.01); H01L 21/28 (2006.01); H01L 21/67 (2006.01); H01L 21/8234 (2006.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [H01L 21/67178 (2013.01); H01L 21/823487 (2013.01); H01L 29/40117 (2019.08); H10B 43/35 (2023.02); H01L 2924/1438 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A stacked structure for a vertical memory device, the stacked structure comprising:
a first structure on a substrate, the first structure including a first sacrificial layer and a support layer stacked on the substrate in a vertical direction perpendicular to an upper surface of the substrate, the first sacrificial layer including germanium; and
a second structure on the first structure, the second structure including an insulation layer and a second sacrificial layer alternately and repeatedly stacked on the first structure, the second sacrificial layer including a nitride, such that the first sacrificial layer and the second sacrificial layer include different materials from each other,
wherein a thickness of the first structure in the vertical direction is less than a thickness of the second structure in the vertical direction.