US 11,700,725 B2
Memory device and method for fabricating the same
Kangsik Choi, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Apr. 12, 2022, as Appl. No. 17/718,849.
Application 17/718,849 is a continuation of application No. 16/899,122, filed on Jun. 11, 2020, granted, now 11,329,046.
Claims priority of application No. 10-2019-0178427 (KR), filed on Dec. 30, 2019.
Prior Publication US 2022/0238527 A1, Jul. 28, 2022
Int. Cl. H10B 12/00 (2023.01); G11C 11/408 (2006.01); G11C 11/4097 (2006.01)
CPC H10B 12/312 (2023.02) [G11C 11/4085 (2013.01); G11C 11/4097 (2013.01); H10B 12/50 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A method for fabricating a memory device, comprising:
forming a plurality of active layers arranged vertically with respect to a substrate;
forming a vertically oriented active body that penetrates through the active layers to interconnect the active layers to each other;
forming a vertically oriented bit line that is spaced apart from one side of the active body and penetrates through the active layers;
forming a vertically oriented capacitor that is spaced apart from another side of the active body and penetrates through the active layers; and
forming a plurality of word lines that are laterally oriented adjacent to one side of each of the active layers.