US 11,700,707 B2
Memory device
Jiangshan Li, Shanghai (CN)
Assigned to SHANNON SYSTEMS LTD., Shanghai (CN)
Filed by Shannon Systems Ltd., Shanghai (CN)
Filed on Oct. 25, 2021, as Appl. No. 17/509,358.
Claims priority of application No. 202121042274.9 (CN), filed on May 14, 2021.
Prior Publication US 2022/0369502 A1, Nov. 17, 2022
Int. Cl. H05K 7/20 (2006.01); H05K 5/00 (2006.01); G06F 1/20 (2006.01)
CPC H05K 7/20154 (2013.01) [G06F 1/20 (2013.01); H05K 7/20127 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a device housing;
a memory module, disposed in the device housing, wherein the memory module generates heat, and the heat is transmitted to the device housing; and
a cooling unit, thermally connected to the device housing to dissipate a part of the heat, wherein the cooling unit comprises:
a unit housing, wherein an interior space is formed in the unit housing; and
a working fluid, disposed in the interior space, wherein a part of the heat travels from the device housing, passes through the unit housing, and is transmitted to the working fluid,
wherein the interior space comprises a flow path, the cooling unit comprises a fluid inlet and a fluid outlet, the fluid inlet is connected to one end of the flow path, the fluid outlet is connected to the other end of the flow path, and the working fluid enters the flow path via the fluid inlet and leaves the flow path via the fluid outlet to remove the heat from the cooling unit.