US 11,699,890 B2
Semiconductor laser machine
Tomohiro Kyoto, Tokyo (JP); Daisuke Morita, Tokyo (JP); Kimio Shigihara, Tokyo (JP); and Keisuke Furuta, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 18/10,468
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Aug. 12, 2020, PCT No. PCT/JP2020/030686
§ 371(c)(1), (2) Date Dec. 15, 2022,
PCT Pub. No. WO2022/034653, PCT Pub. Date Feb. 17, 2022.
Prior Publication US 2023/0163559 A1, May 25, 2023
Int. Cl. H01S 5/023 (2021.01); H01S 5/0237 (2021.01); H01S 5/024 (2006.01)
CPC H01S 5/023 (2021.01) [H01S 5/0237 (2021.01); H01S 5/02469 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A semiconductor laser machine comprising:
a semiconductor laser element including a first end face adapted to emit a laser beam and a second end face that is opposite the first end face;
a heat sink; and
a sub-mount adapted to fix the semiconductor laser element to the heat sink, wherein
the sub-mount includes:
a substrate adapted to relieve thermal stress;
a solder layer joined to the semiconductor laser element; and
a junction layer formed between the substrate and the solder layer,
compared with the semiconductor laser element, the substrate is extended in a rearward direction that is from the first end face toward the second end face, and
the solder layer and the junction layer are removed behind the second end face, wherein
the solder layer and the junction layer have respective rear edges positioned forwardly of the second end face, and
a front edge of the solder layer and a front edge of the junction layer are aligned with a front end face of the substrate.