US 11,699,776 B2
Light-emitting element having conductive contact layer
Schang-Jing Hon, Hsinchu (TW); Chao-Hsing Chen, Hsinchu (TW); Tsun-Kai Ko, Hsinchu (TW); Chien-Fu Shen, Hsinchu (TW); Jia-Kuen Wang, Hsinchu (TW); and Hung-Che Chen, Hinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Feb. 25, 2021, as Appl. No. 17/185,551.
Application 17/185,551 is a continuation of application No. 16/446,059, filed on Jun. 19, 2019, granted, now 10,964,847.
Application 16/446,059 is a continuation of application No. 15/279,149, filed on Sep. 28, 2016, granted, now 10,374,130, issued on Aug. 6, 2019.
Application 15/279,149 is a continuation of application No. 15/050,917, filed on Feb. 23, 2016, granted, now 9,461,208, issued on Oct. 4, 2016.
Application 15/050,917 is a continuation of application No. 14/827,872, filed on Aug. 17, 2015, granted, now 9,306,123, issued on Apr. 5, 2016.
Application 14/827,872 is a continuation of application No. 14/718,242, filed on May 21, 2015, granted, now 9,153,738, issued on Oct. 6, 2015.
Application 14/718,242 is a continuation of application No. 14/098,911, filed on Dec. 6, 2013, granted, now 9,076,946, issued on Jul. 7, 2015.
Claims priority of application No. 101146339 (TW), filed on Jul. 12, 2012.
Prior Publication US 2021/0202797 A1, Jul. 1, 2021
Int. Cl. H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 33/54 (2010.01); H01L 33/44 (2010.01); H01L 33/46 (2010.01); H01L 33/20 (2010.01); H01L 33/24 (2010.01)
CPC H01L 33/387 (2013.01) [H01L 33/20 (2013.01); H01L 33/24 (2013.01); H01L 33/38 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/54 (2013.01); H01L 33/62 (2013.01); H01L 2224/73265 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A light-emitting element, comprising:
a substrate comprising:
a first side;
a second side opposite to the first side; and
a third side connecting the first side and the second side;
a light-emitting semiconductor stack formed on the substrate and comprising:
a first semiconductor layer;
a second semiconductor layer; and
a light-emitting layer between the first semiconductor layer and the second semiconductor layer;
a first electrode formed on the first semiconductor layer, extending from the first side to the second side and comprising a contact area and a first extension area;
a second electrode formed on the second semiconductor layer;
a protection layer formed on the light-emitting semiconductor stack, comprising a first through hole exposing the first electrode and a second through hole exposing the second electrode;
a first conductive part formed on the protection layer and electrically connected to the first electrode through the first through hole; and
a second conductive part formed on the protection layer and electrically connected to the second electrode through the second through hole, wherein the second conductive part comprises a projected area on the light-emitting semiconductor stack, the first extension area is located outside the projected area and located between the second conductive part and the third side,
wherein the first conductive part and the second conductive part each comprises a concave-convex profile.