US 11,699,775 B2
Semiconductor LED and method of manufacturing the same
Junhee Choi, Seongnam-si (KR); Nakhyun Kim, Yongin-si (KR); Jinjoo Park, Yongin-si (KR); and Joohun Han, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO.. LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 30, 2020, as Appl. No. 17/138,071.
Claims priority of application No. 10-2020-0008760 (KR), filed on Jan. 22, 2020; and application No. 10-2020-0073732 (KR), filed on Jun. 17, 2020.
Prior Publication US 2021/0226092 A1, Jul. 22, 2021
Int. Cl. H01L 33/24 (2010.01); H01L 25/075 (2006.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01)
CPC H01L 33/24 (2013.01) [H01L 25/0753 (2013.01); H01L 33/32 (2013.01); H01L 33/0075 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A light emitting diode (LED) comprising:
a first semiconductor layer;
a plurality of active elements disposed on the first semiconductor layer, each of the plurality of active elements spaced apart from each other and having a width less than a width of the first semiconductor layer; and
a second semiconductor layer disposed on the plurality of active elements and comprises a material different from that the first semiconductor layer,
wherein the first semiconductor layer comprises a first semiconductor common layer and a plurality of first semiconductor elements respectively in contact with both the plurality of active elements and the first semiconductor common layer, the plurality of first semiconductor elements being spaced apart from each other,
wherein the second semiconductor layer comprises a plurality of second semiconductor elements respectively in contact with the plurality of active elements, the plurality of second semiconductor elements being spaced apart from each other, and
wherein the first semiconductor common layer and the plurality of first semiconductor elements are made of the same material.