US 11,699,762 B2
Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
Shunpei Yamazaki, Tokyo (JP); Kenichi Okazaki, Tochigi (JP); Masahiro Katayama, Tochigi (JP); and Masataka Nakada, Tochigi (JP)
Assigned to SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Kanagawa-ken (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Aug. 3, 2021, as Appl. No. 17/392,766.
Application 17/392,766 is a continuation of application No. 17/028,014, filed on Sep. 22, 2020, granted, now 11,107,837.
Application 17/028,014 is a continuation of application No. 16/361,452, filed on Mar. 22, 2019, granted, now 10,811,435, issued on Oct. 20, 2020.
Application 16/361,452 is a continuation of application No. 15/220,430, filed on Jul. 27, 2016, granted, now 10,249,645, issued on Apr. 2, 2019.
Application 15/220,430 is a continuation of application No. 14/604,999, filed on Jan. 26, 2015, granted, now 9,443,876, issued on Sep. 13, 2016.
Claims priority of application No. 2014-020517 (JP), filed on Feb. 5, 2014; and application No. 2014-037209 (JP), filed on Feb. 27, 2014.
Prior Publication US 2022/0020781 A1, Jan. 20, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 27/146 (2006.01); H10K 59/121 (2023.01); H01L 27/12 (2006.01); H01L 29/49 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14634 (2013.01); H01L 29/4908 (2013.01); H01L 29/78603 (2013.01); H01L 29/78645 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); H10K 59/1216 (2023.02)] 5 Claims
OG exemplary drawing
 
1. A transistor comprising:
an island-shaped oxide semiconductor film;
a single-layer gate insulating film over the island-shaped oxide semiconductor film; and
a gate electrode over the single-layer gate insulating film,
wherein, in a cross-sectional view parallel to a channel length direction of the transistor, an edge of the single-layer gate insulating film is located on a top surface of the island-shaped oxide semiconductor film,
wherein a first insulating film comprising a region in contact with a side surface of the gate electrode, a region in contact with a top surface of the single-layer gate insulating film, and a region in contact with the top surface of the island-shaped oxide semiconductor film, is provided,
wherein the top surface of the single-layer gate insulating film comprises a region projecting from the gate electrode,
wherein the transistor is a top-gate transistor,
wherein, in the cross-sectional view, the island-shaped oxide semiconductor film comprises a first region overlapping with the single-layer gate insulating film and a second region not overlapping with the single-layer gate insulating film, the second region having a smaller thickness than the first region, and
wherein at least one of a source electrode and a drain electrode comprises a region in contact with a top surface of the second region.