CPC H01L 29/7787 (2013.01) [H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/22 (2013.01); H01L 29/225 (2013.01); H01L 29/7788 (2013.01)] | 19 Claims |
1. An electronic circuit having a semiconductor device that comprises:
a heterostructure including a first layer and a second layer that together form a channel,
wherein the heterostructure is a III-V heterostructure,
wherein the first layer includes fewer than 1×1017 cm−3 oxygen atoms,
wherein the first layer comprises a compound semiconductor to which the second layer adjoins, and
wherein the channel, in the absence of an external field, is substantially free of electrons from a 2-dimensional electron gas.
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