US 11,699,748 B2
Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof
Ferdinando Iucolano, Gravina di Catania (IT); Giuseppe Greco, Misterbianco (IT); and Fabrizio Roccaforte, Mascalucia (IT)
Assigned to STMICROELECTRONICS S.R.L., Agrate Brianza (IT)
Filed by STMICROELECTRONICS S.R.L., Agrate Brianza (IT)
Filed on May 17, 2021, as Appl. No. 17/322,528.
Application 17/322,528 is a continuation of application No. 16/738,935, filed on Jan. 9, 2020, granted, now 11,038,047.
Application 16/738,935 is a continuation of application No. 16/004,272, filed on Jun. 8, 2018, granted, now 10,566,450, issued on Feb. 18, 2020.
Claims priority of application No. 102017000064147 (IT), filed on Jun. 9, 2017.
Prior Publication US 2021/0273087 A1, Sep. 2, 2021
Int. Cl. H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 29/737 (2006.01); H01L 29/207 (2006.01); H01L 29/417 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 29/1066 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01); H01L 29/66462 (2013.01); H01L 29/1087 (2013.01); H01L 29/207 (2013.01); H01L 29/41766 (2013.01); H01L 29/7378 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A structure comprising:
a first semiconductor layer of gallium nitride;
a second semiconductor layer of aluminum gallium nitride on the first semiconductor layer, the second semiconductor layer including a mole fraction of aluminum in a range of 5% and 20%, and a thickness in a range of 5 nm and 30 nm, the second semiconductor layer including a first region and a second region; and
an insulation layer in contact with the first region of the second semiconductor layer and absent from the second region of the second semiconductor layer, the insulation layer including a dielectric material that has a lattice mismatch with respect to the aluminum gallium nitride of the second semiconductor layer in a range of 1% and 20%;
a first source or drain structure extending through the insulation layer, the first source or drain structure terminates at an interface between the first semiconductor layer and the second semiconductor layer.