CPC H01L 29/775 (2013.01) [B82Y 10/00 (2013.01); G06N 10/00 (2019.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/66439 (2013.01); H01L 29/66977 (2013.01); H01L 29/7613 (2013.01); H01L 29/7831 (2013.01)] | 19 Claims |
1. A quantum dot device, comprising:
a quantum well stack;
an insulating material above the quantum well stack, wherein the insulating material includes a trench; and
a gate, wherein the gate includes a first gate metal in the trench and a second gate metal above the first gate metal,
wherein at least one of:
the first gate metal and the second gate metal have different material compositions,
the first gate metal and the second gate metal have different microstructures, or
a seam is present between the first gate metal and the second gate metal.
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