US 11,699,732 B2
Method for forming memory device comprising bottom-select-gate structure
Zhongwang Sun, Wuhan (CN); Zhong Zhang, Wuhan (CN); Lei Liu, Wuhan (CN); Wenxi Zhou, Wuhan (CN); and Zhiliang Xia, Wuhan (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Wuhan (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Wuhan (CN)
Filed on Aug. 19, 2021, as Appl. No. 17/445,434.
Application 17/445,434 is a division of application No. 16/918,259, filed on Jul. 1, 2020, granted, now 11,183,575.
Application 16/918,259 is a continuation of application No. PCT/CN2020/092081, filed on May 25, 2020.
Prior Publication US 2021/0384309 A1, Dec. 9, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/423 (2006.01); H01L 21/28 (2006.01); H10B 41/41 (2023.01); H10B 43/40 (2023.01)
CPC H01L 29/42372 (2013.01) [H01L 29/40114 (2019.08); H01L 29/40117 (2019.08); H10B 41/41 (2023.02); H10B 43/40 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A method for forming a memory device, comprising:
forming a bottom-select-gate (BSG) structure on a substrate;
forming cut slits vertically through the BSG structure on the substrate;
forming a cell-layers structure on the BSG structure; and
forming gate-line slits that are vertically through the cell-layers structure and the BSG structure, into the substrate and arranged along a first lateral direction to distinguish a plurality of finger regions, wherein:
the gate-line slits include a first gate-line slit between first and second finger regions of the plurality of finger regions, the first gate-line slit including gate-line sub-slits, and
the cut slits include a first cut-slit, formed in the second finger region and connecting to a gate-line sub-slit of the first gate-line slit to define a BSG in a first portion of the second finger region, wherein:
the BSG in the first portion of the second finger region is electrically connected to cell strings in the first finger region through an inter portion between the one gate-line sub-slit and an adjacent gate-line sub-slit of the first gate-line slit.