US 11,699,728 B2
Semiconductor device including fin-FET and misaligned source and drain contacts
Chang Woo Noh, Hwaseong-si (KR); Seung Min Song, Hwaseong-si (KR); Geum Jong Bae, Hwaseong-si (KR); and Dong Il Bae, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD.
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 18, 2020, as Appl. No. 17/127,230.
Application 17/127,230 is a continuation of application No. 16/205,851, filed on Nov. 30, 2018, granted, now 10,903,324.
Claims priority of application No. 10-2018-0070820 (KR), filed on Jun. 20, 2018.
Prior Publication US 2021/0104613 A1, Apr. 8, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/41791 (2013.01) [H01L 21/76897 (2013.01); H01L 29/0653 (2013.01); H01L 29/66795 (2013.01); H01L 29/7853 (2013.01); H01L 2029/7858 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a first fin, a second fin and a third fin on the substrate, wherein the second fin is between the first fin and the third fin;
a first isolation on the substrate, and between the first fin and the second fin;
a second isolation on the substrate, and between the second fin and the third fin;
a gate structure on the first fin, the second fin, the third fin, the first isolation, and the second isolation;
a first epitaxial source/drain on the first fin;
a second epitaxial source/drain on the second fin;
a third epitaxial source/drain on the third fin;
a fourth epitaxial source/drain on the first fin;
a fifth epitaxial source/drain on the second fin;
a sixth epitaxial source/drain on the third fin;
a first contact on the first epitaxial source/drain, the second epitaxial source/drain, and the third epitaxial source/drain;
a second contact on the fourth epitaxial source/drain, the fifth epitaxial source/drain, and the sixth epitaxial source/drain;
a first upper contact electrically connected to the first contact; and
a second upper contact electrically connected to the second contact,
wherein the gate structure is between the first epitaxial source/drain and the fourth epitaxial source/drain, between the second epitaxial source/drain and the fifth epitaxial source/drain, and between the third epitaxial source/drain and the sixth epitaxial source/drain,
wherein the gate structure is between the first contact and the second contact,
wherein the first epitaxial source/drain, the second epitaxial source/drain and the third epitaxial source/drain are merged,
wherein the fourth epitaxial source/drain, the fifth epitaxial source/drain and the sixth epitaxial source/drain are merged,
wherein from a top view, the first fin, the second fin, and the third fin are between the first upper contact and the second upper contact,
wherein the first contact comprises a first end and a second end, the first end contacting the first upper contact,
wherein the second contact comprises a third end and a fourth end, the fourth end contacting the second upper contact,
wherein a distance between the first end of the first contact and the first fin is greater than a distance between the third end of the second contact and the first fin, and
wherein a distance between the fourth end of the second contact and the third fin is greater than a distance between the second end of the first contact and the third fin.